Strained structure of semiconductor device and method of making the strained structure

ABSTRACT

An exemplary structure for a field effect transistor (FET) comprises a silicon substrate comprising a first surface; a channel portion over the first surface, wherein the channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; and two source/drain (S/D) regions on the first surface and surrounding the channel portion along the length of the channel portion, wherein the two S/D regions comprise SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority of U.S. Provisional Patent Application Ser. No. 61/638,175, filed on Apr. 25, 2012, which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

This disclosure relates to integrated circuit fabrication and, more particularly, to a semiconductor device with a strained structure.

BACKGROUND

When a semiconductor device, such as a metal-oxide-semiconductor field-effect transistor (MOSFET), is scaled down through various technology nodes, high-k gate dielectric layer and metal gate electrode layer are incorporated into the gate stack of the MOSFET to improve device performance with the decreased feature sizes. In addition, strained structures in source and drain (S/D) recess cavities of the MOSFET utilizing selectively grown silicon germanium (SiGe) may be used to enhance carrier mobility.

However, there are challenges to implement such features and processes in complementary metal-oxide-semiconductor (CMOS) fabrication. For example, it is difficult to achieve enhanced carrier mobility for a field-effect transistor (FET) because strained materials can not deliver a given amount of strain into channel region of the FET, thereby increasing the likelihood of device instability and/or device failure. As the gate length and spacing between devices decrease, these problems are exacerbated.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a flowchart of a method of fabricating a strained structure of a semiconductor device according to various aspects of the present disclosure;

FIGS. 2A-2G are schematic cross-sectional views of an example semiconductor device comprising a strained structure at various stages of fabrication according to various aspects of the present disclosure; and

FIGS. 3A-3D are schematic cross-sectional views of another example semiconductor device comprising a strained structure at various stages of fabrication according to various aspects of the present disclosure.

DESCRIPTION

It is understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Referring to FIG. 1, illustrated is a flowchart of a method 100 of fabricating a strained structure of a semiconductor device according to various aspects of the present disclosure. The method 100 begins with step 102 in which a silicon substrate comprising a first surface is provided. The method 100 continues with step 104 in which a germanium channel is formed over the first surface. The method 100 continues with step 106 in which a cavity is formed that extends through the germanium channel and into the silicon substrate. The method 100 continues with step 108 in which a strained material is epitaxially-grown in the cavity. The discussion that follows illustrates embodiments of semiconductor devices that can be fabricated according to the method 100 of FIG. 1.

FIGS. 2A-2G are schematic cross-sectional views of an example semiconductor device 200 comprising a strained structure 230 a at various stages of fabrication according to various aspects of the present disclosure. FIGS. 3A-3D are schematic cross-sectional views of another example semiconductor device 300 comprising a strained structure 330 a at various stages of fabrication according to various aspects of the present disclosure. As employed in the present disclosure, the term semiconductor devices 200, 300 refer to a fin field effect transistor (FinFET). The FinFET refers to any fin-based, multi-gate transistor. In some alternative embodiments, the term semiconductor devices 200, 300 refer to a planar field effect transistor (FET). The semiconductor devices 200, 300 may be included in a microprocessor, memory cell, and/or other integrated circuit (IC). It is noted that the method of FIG. 1 does not produce a completed semiconductor devices 200, 300. Completed semiconductor devices 200, 300 may be fabricated using complementary metal-oxide-semiconductor (CMOS) technology processing. Accordingly, it is understood that additional processes may be provided before, during, and after the method 100 of FIG. 1, and that some other processes may only be briefly described herein. Also, FIGS. 2A through 3D are simplified for a better understanding of the concepts of the present disclosure. For example, although only the semiconductor devices 200, 300 are depicted in FIGS. 2A-3D, it is understood the IC may comprise a number of other devices comprising resistors, capacitors, inductors, fuses, etc.

Referring to FIG. 2A and step 102 in FIG. 1, a substrate 20 is provided. In one embodiment, the substrate 20 comprises a crystalline silicon substrate (e.g., wafer). In an alternative embodiment, the substrate 20 may be made of some other suitable elemental semiconductor, such as diamond or germanium; a suitable compound semiconductor, such as gallium arsenide, silicon carbide, indium arsenide, or indium phosphide; or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. Further, the substrate 20 may include an epitaxial layer (epi-layer), may be strained for performance enhancement, and/or may include a silicon-on-insulator (SOI) structure. The substrate 20 may comprise various doped regions depending on design requirements (e.g., p-type substrate or n-type substrate). In some embodiments, the doped regions may be doped with p-type or n-type dopants. For example, the doped regions may be doped with p-type dopants, such as boron or BF₂; n-type dopants, such as phosphorus or arsenic; and/or combinations thereof. The doped regions may be usable for forming an n-type field effect transistor (FET), or alternatively for forming a p-type FET.

In the depicted embodiment, the substrate 20 comprises a first region 20 a and a second region 20 b. In one embodiment for the semiconductor device 200, the first region 20 a refers to a core region where core devices would be formed. The second region 20 b refers to a peripheral region where input/output (I/O) devices would be formed. In some embodiments, both the core devices and I/O devices are p-type FETs. In some embodiments, both the core devices and I/O devices are n-type FETs. In an alternative embodiment for the semiconductor device 300, the first region 20 a refers to a first core region where first core devices would be formed. The second region 20 b refers to a second core region where second core devices would be formed. In the depicted embodiment, the first core devices are p-type FETs, while the second core devices are n-type FETs. In yet another alternative embodiment for the semiconductor device 300, the first region 20 a refers to a first core region where first core devices would be formed. The second region 20 b refers to a peripheral region where I/O devices would be formed. In the depicted embodiment, the first core devices are p-type FETs, while the I/O devices are n-type FETs.

In an embodiment for forming FinFETs, the substrate 20 comprises a first fin structure 202 a in the first region 20 a and a second fin structure 202 b in the second region 20 b. Each of the first fin structure 202 a and second fin structure 202 b, formed on the substrate 20, comprises one or more fins. In the depicted embodiment, for simplicity, each of the first fin structure 202 a and second fin structure 202 b comprises a single fin.

The first and second fin structures 202 a, 202 b are formed using any suitable process comprising various deposition, photolithography and/or etching processes. An exemplary photolithography process may include forming a photoresist layer (resist) overlying the substrate 20 (e.g., on a silicon layer), exposing the resist to a pattern, performing a post-exposure bake process, and developing the resist to form a masking element including the resist. The silicon layer may then be etched using reactive ion etching (RIE) processes and/or other suitable processes. In an example, silicon fins of the first and second fin structures 202 a, 202 b may be formed using patterning and etching a portion of the silicon substrate 20. In another example, silicon fins of the first and second fin structures 202 a, 202 b may be formed using patterning and etching a silicon layer deposited overlying an insulator layer (for example, an upper silicon layer of a silicon-insulator-silicon stack of an SOI substrate).

In the depicted embodiment, isolation regions are formed within the substrate 20 to define and electrically isolate the first and second fin structures 202 a, 202 b. In one example, the isolation regions include a shallow trench isolation (STI) 204 regions. The isolation regions may comprise silicon oxide, silicon nitride, silicon oxynitride, fluoride-doped silicate glass (FSG), a low-K dielectric material, and/or combinations thereof. The isolation regions, and in the present embodiment, the STI 204 regions, may be formed by any suitable process. As one example, the formation of the STI 204 regions may include filling trenches between the first and second fin structures 202 a, 202 b (for example, using a chemical vapor deposition process) with a dielectric material. In some embodiments, the filled trench may have a multi-layer structure such as a thermal oxide liner layer filled with silicon nitride or silicon oxide. In the depicted embodiment, the STI 204 regions comprise STI surfaces 204 s.

Referring to FIG. 2B and step 102 in FIG. 1, upper portion of the first fin structure 202 a is recessed to form first trench 206 a below the STI surfaces 204 s, while upper portion of the second fin structure 202 b is recessed to form second trench 206 b below the STI surfaces 204 s. In the present embodiment, each of exposed surfaces of lower portions of the first and second fin structures 202 a, 202 b defines a first surface 20 s. In an exemplary embodiment, a height H of the first and second trenches 206 a, 206 b may range from about 20 nm to about 70 nm. One skilled in the art will realize, however, that the dimensions and values recited throughout the descriptions are merely examples, and may be changed to suit different scales of ICs.

In the depicted embodiment, using the STI 204 regions as a hard mask, a biased etching process is performed to recess the first fin structure 202 a to form the first trench 206 a and the second fin structure 202 b to form the second trench 206 b. In one embodiment, the etching process may be performed under a pressure of about 1 mTorr to 1000 mTorr, a power of about 50 W to 1000 W, a bias voltage of about 20 V to 500 V, at a temperature of about 40° C. to 60° C., using a HBr and/or Cl₂ as etch gases. Also, in some embodiments, the bias voltage used in the etching process may be tuned to allow better control of an etching direction to achieve predetermined profiles for the trenches 206 a, 206 b.

The method 100 continues with step 104 in which the structure in FIG. 2C is produced by forming a first germanium channel 208 a and a second germanium channel 208 b over the first surface 20 s, wherein each of the first germanium channel 208 a and the second germanium channel 208 b has a second surface 208 s at a first height H₁ above the first surface 20 s, and a length L parallel to first surface 20 s.

When choosing a semiconductor material for forming a channel region, considerations include the properties of the semiconductor material such as junction forward voltage, mobility of electron and hole, leakage current level, and quality of interface between the semiconductor material and other materials, such as oxide materials. Germanium (Ge) has higher electron mobility than Si. Accordingly, in the depicted embodiment, a channel region of the semiconductor device 200 is Ge. In some embodiments, the semiconductor material for forming the channel region comprises a material other than germanium, such as gallium arsenide, silicon carbide, indium arsenide, or indium phosphide; or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide.

In one embodiment, the Ge epitaxial process may be performed under a pressure of about 10 mTorr to 100 mTorr, at a temperature of about 350° C. to 450° C., using GeH₄, GeH₃CH₃, and/or (GeH₃)₂CH₂ as epitaxial gases. Optionally, an anneal process after the epitaxial process is performed at a temperature of about 550° C. to 750° C. to confine dislocation defects on the interface of the Si and Ge epitaxial layer. In an embodiment for forming planar FETs (not shown), the portion of the STI 204 remains due to only surface channel needed. In an embodiment for forming FinFETs, a portion of the STI 204 regions is removed by HF solution to expose the Ge epitaxial layer (shown in FIG. 2D), acting as germanium channels of the semiconductor devices 200, 300.

Referring to FIG. 2D, subsequent to the formation of the first and second germanium channels 208 a, 208 b over the first surface 20 s, a first gate stack 210 a is formed on the second surface 208 s of the first germanium channels 208 a, while a second gate stack 210 b is formed on the second surface 208 s of the second germanium channels 208 b. In the depicted embodiment, each of the first and second gate stacks 210 a, 210 b comprises a gate dielectric layer 212 and a gate electrode layer 214. The first and second gate stacks 210 a, 210 b may be formed using any suitable process, including the processes described herein.

In one example, the gate dielectric layer 212 and gate electrode layer 214 are sequentially deposited over the substrate 20. In some embodiments, the gate dielectric layer 212 may include silicon oxide, silicon nitride, silicon oxy-nitride, or high-k dielectric. High-k dielectrics comprise metal oxides. Examples of metal oxides used for high-k dielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or mixtures thereof. In the present embodiment, the gate dielectric layer 212 is a high-k dielectric layer with a thickness in the range of about 10 to 30 angstroms. The gate dielectric layer 212 may be formed using a suitable process such as atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), thermal oxidation, UV- ozone oxidation, or combinations thereof. The gate dielectric layer 212 may further comprise an interfacial layer (not shown) to reduce damage between the gate dielectric layer 212 and the fin structures 202 a and 202 b. The interfacial layer may comprise silicon oxide.

In some embodiments, the gate electrode layer 214 may comprise a single layer or multilayer structure. In the present embodiment, the gate electrode layer 214 may comprise poly-silicon. Further, the gate electrode layer 214 may be doped poly-silicon with the uniform or non-uniform doping. In some alternative embodiments, the gate electrode layer 214 may include a metal such as Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlN, TaN, NiSi, CoSi, other conductive materials with a work function compatible with the substrate material, or combinations thereof. In the present embodiment, the gate electrode layer 214 has a thickness in the range of about 30 nm to about 60 nm. The gate electrode layer 214 may be formed using a suitable process such as ALD, CVD, PVD, plating, or combinations thereof.

Then, a layer of photoresist (not shown) is formed over the gate electrode layer 214 by a suitable process, such as spin-on coating, and patterned to form a patterned photoresist feature by a proper lithography patterning method. In at least one embodiment, a width of the patterned photoresist feature is in the range of about 5 to 45 nm. The patterned photoresist feature can then be transferred using a dry etching process to the underlying layers (i.e., the gate electrode layer 214 and the gate dielectric layer 212) to form the first and second gate stacks 210 a, 210 b. The photoresist layer may be stripped thereafter.

In another example, a hard mask layer (not shown) is formed over the gate electrode layer 214; a patterned photoresist layer (not shown) is formed on the hard mask layer; the pattern of the photoresist layer is transferred to the hard mask layer and then transferred to the gate electrode layer 214 and the gate dielectric layer 212 to form the first and second gate stacks 210 a, 210 b. The hard mask layer comprises silicon oxide. In some alternative embodiments, the hard mask layer may optionally comprise silicon nitride, silicon oxynitride, and/or other suitable dielectric materials, and may be formed using a method such as CVD or PVD. The hard mask layer has a thickness in the range from about 100 to 800 angstroms. The photoresist layer may be stripped thereafter.

Still referring to FIG. 2D, the semiconductor device 200 further comprises a pair of sidewall spacers 216 a on two sides of the first gate stack 210 a and a pair of sidewall spacers 216 b on two sides of the second gate stack 210 b. In some embodiments, the sidewall spacers 216 a are formed by first forming a dielectric layer over the first and second gate stacks 210 a, 210 b. The dielectric layer may include silicon oxide, silicon nitride, silicon oxy-nitride, or other suitable material. The dielectric layer may comprise a single layer or multilayer structure. The dielectric layer may be formed by CVD, PVD, ALD, or other suitable technique. The dielectric layer has a thickness ranging from about 5 to 15 nm. Then, an anisotropic etching is performed on the dielectric layer to form the pair of sidewall spacers 216 a on two sides of the first gate stack 210 a and the pair of sidewall spacers 216 b on two sides of the second gate stack 210 b.

Referring to FIG. 2E, after the formation of the first and second gate stacks 210 a, 210 b, portions of the first and second germanium channels 208 a, 208 b (other than where the first and second gate stacks 210 a, 210 b and sidewall spacers 216 a, 216 b are formed thereover) are recessed to form first source and drain (S/D) cavities 218 a in the first germanium channels 208 a and second S/D cavities 218 b in the second germanium channels 208 b. Both the first and second S/D cavities 218 a, 218 b are between the first surface 20 s and second surface 208 s. In the depicted embodiment, the first S/D cavities 218 a are adjacent to the first gate stack 210 a, while the second S/D cavities 218 b are adjacent to the second gate stack 210 b, wherein each first S/D cavities 218 a formed by the first germanium channel 208 a comprises one sidewall 218 c and a bottom surface 218 d, wherein each second S/D cavities 218 b formed by the second germanium channel 208 b comprises one sidewall 218 e and a bottom surface 218 f. In an alternative embodiment, the germanium channels 208 a, 208 b are not all recessed as depicted in FIG. 2E.

In the depicted embodiment, using the pairs of sidewall spacers 216 a, 216 b as hard masks, a biased etching process is performed to recess at least a portion of the second surface 208 s of the first and second germanium channels 208 a, 208 b that are unprotected or exposed to form the first and second S/D cavities 218 a, 218 b. In one embodiment, the etching process may be performed using a chemical selected from NF₃, CF₄, and SF₆ as an etching gas. In an alternative embodiment, the etching process may be performed using a solution comprising NH₄OH and H₂O₂.

The process steps up to this point have provided the first and second S/D cavities 218 a, 218 b between the first surface 20 s and second surface 208 s. In some configurations, using a metal-organic chemical vapor deposition (MOCVD) process, a strained material such as a gallium arsenide (GaAs) is selectively grown in the first cavities 218 a of the first germanium channels 208 a along the sidewall 208 c and the bottom surface 208 d. However, the growing process of the strained material is not well-controlled using the MOCVD process.

Therefore, using MOCVD creates a non-uniform distribution of strained material in the cavities 218 a. Since the lattice constant of the strained material is different from the first germanium channels 208 a, the channel region of a semiconductor device is strained or stressed to enhance carrier mobility of the device. However, the non-uniform distribution of strained materials in the cavities 218 a causes non-uniformity of strains applied to the channel region of the semiconductor device. Thus, the strained material may not deliver a given amount of strain into channel region of the semiconductor device, resulting in an insufficient on-current of the semiconductor device.

Accordingly, the processing discussed below with reference to FIGS. 2F-2G and 3A-3D may form cavities that extend through the germanium channel and into the silicon substrate. The cavities are filled with a strained structure comprising a SiGe layer. The strained structure may decrease non-uniform distribution of strained material, thereby delivering a given amount of strain into channel region of the semiconductor device. Problems associated with insufficient on-current of a semiconductor device may be avoided, thereby enhancing the device performance.

For fabricating one embodiment of a strained structure 230 (shown in FIG. 2G) of the semiconductor device 200, the structure in FIG. 2F is produced by a deep-cavity patterning process (step 106 in FIG. 1). The deep-cavity patterning process may be accomplished by forming a photo-sensitive layer 220 over the substrate 20. The photo-sensitive layer 220 is then patterned to expose the first S/D cavities 218 a of the first germanium channel 208 a, while cover the second S/D cavities 218 b of the second germanium channel 208 b.

In the depicted embodiment, using the patterned photo-sensitive layer 220, first gate stack 210 a, and STI 204 regions as masks, the exposed first S/D cavities 218 a of the first germanium channel 208 a are further etched to form third cavities 228 a that extend through the first germanium channel 208 a and into the silicon substrate 20. In one embodiment, the etching process may be performed using a chemical selected from NF₃, CF₄, and SF₆ as an etching gas. In an alternative embodiment, the etching process may be performed using a solution comprising NH₄OH and H₂O₂. The patterned photo-sensitive layer 220 may be stripped thereafter to expose the second S/D cavities 218 b of the second germanium channel 208 b.

Referring to FIG. 2G and step 108 in FIG. 1, after formation of the third cavities 228 a that extend through the first germanium channel 208 a and into the silicon substrate 20, the structure in FIG. 2G is produced by epitaxially-growing a strained material in the second S/D cavities 218 b to form S/D regions 222 b and third S/D cavities 228 a to form S/D regions 222 a. The strained material may comprises SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.

In the depicted embodiment, a pre-cleaning process may be performed to clean the second and third S/D cavities 218 b, 228 a with HF or other suitable solution. Then, the strained material such as silicon germanium (SiGe) is selectively grown by an LPCVD process to fill the second and third S/D cavities 218 b, 228 a. In the depicted embodiment, the LPCVD process is performed at a temperature of about 660 to 700° C. and under a pressure of about 13 to 50 Torr, using SiH₂Cl₂, HCl, GeH₄, B₂H₆, and H₂ as reaction gases. A ratio of a mass flow rate of the SiH₂Cl₂ to a mass flow rate of the HCl is in the range of about 0.8 to 1.5, while a ratio of a mass flow rate of the SiH₂Cl₂ to a mass flow rate of the GeH₄ is in the range of about 10 to 50.

In the first region 20 a (or refers to a core region), two S/D regions 222 a are formed on the first surface 20 s (dotted line) and sandwiching an upper portion of the first germanium channel 208 a having a length L_(a) of the channel 208 a. In some embodiments, the two S/D regions 222 a extending downward from the second surface 208 s is coplanar with the first surface 20 s (dotted line). In some embodiments, the two S/D regions 222 a extending downward from the second surface 208 s is lower than the first surface 20 s. As such, a portion of the two S/D regions 222 a extending downward from the second surface 208 s has a second height H₂ equal to or greater than the first height H₁. In some embodiments, a ratio of the second height H₂ to the first height H₁ is from 1 to 1.2. The two S/D regions 222 a are combined and referred to a strained structure 230 a. Compared with the strained structure formed by using MOCVD, the strained structure 230 a has better uniformity, thereby delivering a given amount of strain into channel region of the semiconductor device 200 and enhancing the device performance.

In the second region 20 b (or refers to a peripheral region), two S/D regions 222 b are formed on the second germanium channel 208 b and sandwiching an upper portion of the second germanium channel 208 b having a length L_(b) of the channel 208 b. The two S/D regions 222 b are combined and referred to a strained structure 230 b. In some embodiments, the core devices (or the I/O devices) include both NMOS and PMOS. In some embodiments, both the core devices and I/O devices are p-type FETs if the strained material comprises SiGe, Ge, GeSn, SiGeSn, SiSn, or III-V material. In some embodiments, both the core devices and I/O devices are n-type FETs if the strained material comprises SiGe, Si or SiC.

In some alternative embodiments, for fabricating another embodiment of a strained structure 330 (shown in FIG. 3D) of the semiconductor device 300, the structure in FIG. 3A shows the semiconductor device 300 (200 in FIG. 2D) after recessing the second germanium channel 208 b to form fourth S/D cavities 318 b in the second germanium channels 208 b. In the present embodiment, the semiconductor device 300 of FIGS. 3A-3D follows the formation of the semiconductor device 200 of FIG. 2D. Accordingly, similar features in FIGS. 2D and 3A-3D are numbered the same for the sake of clarity and simplicity. In the depicted embodiment, the fourth S/D cavities 318 b are adjacent to the second gate stack 210 b, wherein each fourth S/D cavities 318 b formed by the second germanium channel 208 b has a fourth surface 318 s. The fourth surface 318 s is between the first surface 20 s and second surface 208 s.

In the depicted embodiment, a dummy dielectric layer comprising a material such as silicon oxide is formed over the substrate 20 by a CVD process, and patterned to form a dummy dielectric feature 310 by proper lithography and etch methods. The patterned dummy dielectric feature 310 covers the first germanium channel 208 a and exposes portions of the second germanium channel 208 b (other than where the second gate stack 210 b and the pair of sidewall spacers 216 b are formed thereover). Then, using the patterned dummy dielectric feature 310 and the pair of sidewall spacers 216 b as hard masks, a biased etching process is performed to recess the second surface 208 s of the second germanium channel 208 b that are unprotected or exposed to form the fourth S/D cavities 318 b between the first surface 20 s and the second surface 208 s. In one embodiment, the etching process may be performed using a chemical selected from NF₃, CF₄, and SF₆ as an etching gas. In an alternative embodiment, the etching process may be performed using a solution comprising NH₄OH and H₂O₂. In some embodiments, the step of recessing the second germanium channel 208 b as depicted in FIG. 2E is skipped. In an alternative embodiment, the step of recessing the germanium channels 208 a, 208 b in FIG. 2E is skipped.

Referring to FIG. 3B, subsequent to formation of the fourth S/D cavities 318 b between the first surface 20 s and the second surface 208 s, two S/D regions 322 b are epitaxially grown on the fourth surface 318 s and sandwiching an upper portion of the second germanium channel 208 b having a length L_(d) of the second germanium channel 208 b. In one embodiment, a portion of the two S/D regions 322 b extending downward from the second surface 208 s has a third height H₃ less than the first height H₁. In another embodiment, a ratio of the third height H₃ to the first height H₁ is from 0.5 to 0.9. In the depicted embodiment, the two S/D regions 322 b are combined and referred to a strained structure 330 b. In some embodiments, the two S/D regions 322 b comprise SiGe, Si or SiC. As such, the two S/D regions 322 b in the second region 20 b refer to a core region for n-type core FETs or a peripheral region for n-type I/O FETs.

In the depicted embodiment, a pre-cleaning process may be performed to clean the fourth S/D cavities 318 b with HF or other suitable solution. Then, a strained material such as SiC is selectively grown by an LPCVD process to fill the fourth S/D cavities 318 b. In the depicted embodiment, the LPCVD process is performed at a temperature of about 400 to 800° C. and under a pressure of about 1 to 15 Torr, using SiH₄, CH₄, and H₂ as reaction gases. Then the patterned dummy dielectric feature 310 is removed using HF solution.

Referring to FIG. 3C and step 106 in FIG. 1, after the formation of the two S/D regions 322 b on the fourth surface 318 s, the structure in FIG. 3C is produced by recessing the first germanium channel 208 a to form fifth S/D cavities 328 a that extend through the first germanium channel 208 a and into the silicon substrate 20. In the depicted embodiment, the fifth S/D cavities 328 a are distributed adjacent to the first gate stack 210 a.

In the depicted embodiment, a dummy dielectric layer such as silicon oxide is formed over the substrate 20 by a CVD process, and patterned to form a dummy dielectric feature 320 by proper lithography and etch methods. The patterned dummy dielectric feature 320 covers the second germanium channel 208 b and exposes portions of the first germanium channel 208 a (other than where the first gate stack 210 a and the pair of sidewall spacers 216 a are formed thereover). Then, using the patterned dummy dielectric feature 320 and the pair of sidewall spacers 216 a as hard masks, a biased etching process is performed to recess the second surface 208 s of the first germanium channel 208 a that are unprotected or exposed to form the fifth S/D cavities 328 a. In at least one embodiment, the etching process may be performed using a chemical selected from NF₃, CF₄, and SF₆ as an etching gas. In an alternative embodiment, the etching process may be performed using a solution comprising NH₄OH and/or H₂O₂.

Referring to FIG. 3D and step 108 in FIG. 1, after the formation of the fifth S/D cavities 328 a that extend through the first germanium channel 208 a and into the silicon substrate 20, the structure in FIG. 3D is produced by epitaxially-growing a strained material in the fifth S/D cavities 328 a form S/D regions 322 a. The strained material may comprise SiGe, Ge, GeSn, SiGeSn, SiSn, or III-V material.

In the depicted embodiment, a pre-cleaning process may be performed to clean the fifth S/D cavities 328 a with HF or other suitable solution. Then, the strained material such as silicon germanium (SiGe) is selectively grown by an LPCVD process to fill the fifth S/D cavities 328 a. In one embodiment, the LPCVD process is performed at a temperature of about 660 to 700° C. and under a pressure of about 13 to 50 Torr, using SiH₂Cl₂, HCl, GeH₄, B₂H₆, and H₂ as reaction gases. In some embodiments, a ratio of a mass flow rate of the SiH₂Cl₂ to a mass flow rate of the HCl is in the range of about 0.8 to 1.5, while a ratio of a mass flow rate of the SiH₂Cl₂ to a mass flow rate of the GeH₄ is in the range of about 10 to 50.

In the first region 20 a (or refers to a core region), two S/D regions 322 a are formed on the first surface 20 s (dotted line) and sandwiching an upper portion of the first germanium channel 208 a having a length L_(c) of the channel 208 a. In some embodiments, the two S/D regions 322 a extending downward from the second surface 208 s is coplanar with the first surface 20 s (dotted line). In some embodiments, the two S/D regions 322 a extending downward from the second surface 208 s is lower than the first surface 20 s. As such, a portion of the two S/D regions 322 a extending downward from the second surface 208 s has a fourth height H₄ equal to or greater than the first height H₁. In some embodiments, a ratio of the fourth height H₄ to the first height H₁ is from 1 to 1.2. The two S/D regions 322 a are combined and referred to a strained structure 330 a. Compared with the strained structure formed by using MOCVD, the strained structure 330 a has better uniformity, thereby delivering a given amount of strain into channel region of the semiconductor device 300 and enhancing the device performance.

After the steps shown in FIG. 1, as further explained in FIGS. 2A-2G or FIG. 2A-2D and 3A-3D, have been performed, subsequent processes, comprising silicidation and interconnect processing, are typically performed to complete the semiconductor devices 200, 300 fabrications.

In accordance with embodiments, a field effect transistor (FET) comprises a silicon substrate comprising a first surface; a channel portion over the first surface, wherein the channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; and two source/drain (S/D) regions on the first surface and surrounding the channel portion along the length of the channel portion, wherein the two S/D regions comprise SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.

In accordance with other embodiments, a semiconductor device comprises a silicon substrate comprising a first surface; a first channel portion and a second channel portion over the first surface, wherein each channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; a first field effect transistor (FET) comprising two SiGe regions on the first surface and surrounding the first channel portion along the length of the first channel portion; and a second FET comprising two SiP regions on a third surface and surrounding the second channel portion along the length of the second channel portion, wherein the third surface is between the first surface and second surface.

In accordance with yet other embodiments, a method of fabricating a field effect transistor (FET) includes providing a silicon substrate comprising a first surface; forming a channel portion over the first surface; and forming cavities that extend through the channel portion and into the silicon substrate; and epitaxially-growing a strained material in the cavities.

While the invention has been described by way of example and in terms of embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements. 

1. A field effect transistor (FET) comprising: a silicon substrate comprising a first surface; a channel portion over the first surface, wherein the channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; and two source/drain (S/D) regions on the first surface and surrounding the channel portion along the length of the channel portion, wherein the two S/D regions comprise SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.
 2. The FET of claim 1, wherein a portion of the two S/D regions extending downward from the second surface has a second height equal to or greater than the first height.
 3. The FET of claim 2, wherein a ratio of the second height to the first height is from 1 to 1.2.
 4. The FET of claim 1, wherein the FET comprise planar FET.
 5. The FET of claim 1, wherein the FET comprise FinFET.
 6. A semiconductor device comprising: a silicon substrate comprising a first surface; a first channel portion and a second channel portion over the first surface, wherein each channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; a first field effect transistor (FET) comprising first two source/drain (S/D) regions on the first surface and surrounding the first channel portion along the length of the first channel portion, wherein the first two S/D regions comprise SiGe, Ge, GeSn, SiGeSn, SiSn, or III-V material; and a second FET comprising second two S/D regions on a third surface and surrounding the second channel portion along the length of the second channel portion, wherein the third surface is between the first surface and second surface, wherein the second two S/D regions comprise SiGe, Si, or SiC.
 7. The semiconductor device of claim 6, a portion of the first two S/D regions extending downward from the second surface has a second height equal to or greater than the first height.
 8. The semiconductor device of claim 7, wherein a ratio of the second height to the first height is from 1 to 1.2.
 9. The semiconductor device of claim 6, wherein a portion of the second two S/D regions extending downward from the second surface has a third height less than the first height.
 10. The semiconductor device of claim 9, wherein a ratio of the third height to the first height is from 0.5 to 0.9.
 11. The semiconductor device of claim 6, wherein the first FET and second FET comprise planar FET.
 12. The semiconductor device of claim 6, wherein the first FET and second FET comprise FinFET.
 13. The semiconductor device of claim 6, wherein the first FET is a p-type FET and the second FET is an n-type FET.
 14. The semiconductor device of claim 6, wherein the first FET is a core device and the second FET is an I/O device. 15-20. (canceled)
 21. A semiconductor device comprising: a substrate comprising a first surface; a first field effect transistor (FET) on the first surface, the first FET comprising: a first channel portion over the first surface, first source/drain (S/D) regions on the substrate surrounding the first channel portion along a length of the first channel portion, the first S/D regions having a first height; and a second FET on the first surface, the second FET comprising: a second channel portion over the first surface, second S/D regions on the substrate surrounding the second channel portion along a length of the second channel portion, the second S/D regions having a second height different from the first height.
 22. The semiconductor device of claim 21, wherein a portion of the second channel portion is positioned between the first surface and the second S/D regions.
 23. The semiconductor device of claim 21, wherein the first channel portion has a channel height above the first surface, wherein a ratio of the first height to the channel height ranges from 1 to 1.2.
 24. The semiconductor device of claim 21, wherein the second channel portion has a channel height above the first surface, wherein a ratio of the second height to the channel height ranges from 0.5 to 0.9.
 25. The semiconductor device of claim 21, wherein the first channel portion and the second channel portion independently comprise germanium, gallium arsenide, silicon carbide, indium arsenide, indium phosphide, silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide.
 26. The semiconductor device of claim 21, wherein the first FET comprises a first gate stack on the first channel portion between the first S/D regions, and the second FET comprises a second gate stack on the second channel portion between the second S/D regions. 